scope:

This specification covers the detail requirements for a low-power, high-frequency, PNP, germanium transistor.

See figure 1 (modified TO-39).

See table I. TABLE I. Maximum ratings

P_T1/ P_T 2/ V_CBO V_EBO I_C T_stg T_J T_A = 25° C T_C = 25° C -------------------------------------------------------------------------------- mW mW Vdc Vdc mAdc °C °C 300 750 −30 −0.7 100 −65 to +100 +100 1/ Derate linearly at 4.0 mW/°C for T_A > 25° C 2/ Derate linearly at 10.0 mW/°C T_C> 25° C

See table II. TABLE II. Primary electrical characteristics

h_FE h_fe C_obo V_CE(sat) V_CE = −10 Vdc V_CE = −10 Vdc V_CB = −10 Vdc I_C = −50 mAdc Limits I_C = −10 mAdc I_C = −10 mAdc I_E = 0 I_B = −10 mAdc f = 100 mc f = 1 mc ------------------------------------------------------------------------------------- db pf Vdc Min 10 10 --- --- Max --- --- 4 −2