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F867M REV A

Standard Guide for Ionizing Radiation Effects (Total Dose) Testing of Semiconductor Devices (Metric)

inactive, Most Current
Publication Date: 15 December 1994
Status: inactive
Page Count: 7

Document History

F867M REV A
December 15, 1994
Standard Guide for Ionizing Radiation Effects (Total Dose) Testing of Semiconductor Devices (Metric)
A description is not available for this item.
ASTM F867M
April 15, 1994
STANDARD GUIDE FOR IONIZING RADIATION EFFECTS (TOTAL DOSE) TESTING OF SEMICONDUCTOR DEVICES (METRIC)
A description is not available for this item.

References

This document references:
MIL-HDBK-814 - IONIZING DOSE AND NEUTRON HARDNESS ASSURANCE GUIDELINES FOR MICROCIRCUITS AND SEMICONDUCTOR DEVICES
Published by NPFC on February 8, 1994
Systems that must operate in a radiation environment have to be designed to be survivable (hard) to radiation stress levels specified for them. In addition to design hardening, a Hardness Assurance...
This document references:
ASTM E1249 - Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
Published by ASTM on June 1, 2015
This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD’s), to determine the absorbed dose in a region of interest within an electronic device...
This document references:
ASTM E1250 - Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
Published by ASTM on June 1, 2015
Low energy components in the photon energy spectrum of Co-60 irradiators lead to absorbed dose enhancement effects in the radiation-hardness testing of silicon electronic devices. These low energy...
This document references:
MIL-STD-750F CHANGE 3 - TEST METHODS FOR SEMICONDUCTOR DEVICES
Published by DLA on April 1, 2021
Purpose. This standard establishes uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems. The methods and procedures in...
This document is referenced by:
ASTM F1262M - Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)
Published by ASTM on June 1, 2014
This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy...
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