DLA - MIL-S-19500/315E
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS
| Organization: | DLA |
| Publication Date: | 10 March 1992 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This specification covers the detail requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each device type as specified in MIL-S-19500.
Type 2N2880, see figure 1.
Type 2N3749, see figure 2.
Primary electrical characteristics at TC = 25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, Attn: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5280, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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