scope:

This specification covers the detail requirements for monolithic silicon, silicon gate, NMOS, ROM microcircuits. One product assurance class and a choice of case outlines and lead finishes are provided and are reflected in the part number.

The part number shall be in accordance with MIL-M-38510 with the exception that the "JAN" or "J" certification mark shall not be used.

The device type shall be as follows:

Device type Circuit 01 2048-word × 8-bit static ROM with 3-state outputs

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) J D-3 (24-lead, ½" × 1-¼") dual-incline package

Storage temperature range - - - - - - - - - - −65°C to +150°C Case operating temperature range (T_C) - - - - −55°C to +125°C Supply voltage range - - - - - - - - - - - - - −0.3 V dc to +7.0 V dc Power dissipation (P_D) (for T_C -= -55 C to +126°C)- - - - - - - - - - 1.0 W maximum Input voltage range, all inputs- - - - - - - - −0.3 V dc to +7.0 V dc Lead temperature (during soldering, at distance 1/16 ±1/32 inch (1.59 ±0.79 mm) from case for 10 seconds maximum) - - - - - +265°C Thermal resistance, junction-to-case (Θ_JC) - - 0.0833°C/mW Maximum junction temperature (T_J) - - - - - - +150°C 1/

Supply voltage range (V_CC)- - - - - - - - +4.5 V dc to +5.5 V dc Low level input voltage range (V_IL) - - - −0.3 V dc to +0.8 V dc High level input voltage range (V_IH)- - - +2.0 V dc to V_CC

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

intended Use:

Microcircuits conforming to this specification are intended for logistic support of existing equipment.