DLA - SMD-5962-95587
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 23 April 1996 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
The PIN is be as shown in the following example:
Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function Toggle Speed (Mhz) 01 isplsi 1048C EECMOS 8,000 gate in-system 50 programmable logic device
The device class designator is a single letter identifying the product assurance level as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535
The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style X CMGA6-P133 133 Pin grid array
The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.
Supply voltage range (VCC)- - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range (applied) - - - - - - - - - - - - - - −2.5 V dc to VCC + 1.0 V dc Off state output volatage range applied - - - - - - - - - −2.5 V dc to VCC + 1.0 V dc Maximum power dissapation - - - - - - - - - - - - - - - - 2.4 W 2/ Lead temperature (soldering, 10 seconds) - - - - - - - - +300°C Thermal resistance, junction-to-case (θJC): Case outline X- - - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - +175°C 3/ Endurance - - - - - - - - - - - - - - - - - - - - - - - - 1000 erase/write cycles (minimum) Data retention (at +55°C) - - - - - - - - - - - - - - - - 20 years (minimum)
Case operating temperature Range(TC)- - - - - - - - - - - −55°C to +125°C Supply voltage range - - - - - - - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) - - - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH)- - - - - - - - - - - - - - - - - 2.0 V dc to VCC +1.0 V dc Input low voltage (VIL) - - - - - - - - - - - - - - - - - 0.0 V dc to 0.8 V dc
Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - - - 3/ percent
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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