DLA - SMD-5962-86064 REV A
MICROCIRCUITS, LINEAR, ULTRA HIGH-FREQUENCY OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 15 January 1987 |
| Status: | inactive |
| Page Count: | 9 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete part number shall be as shown in the following example:
The device type shall identify the circuit function as follows:
Device type Generic number Circuit function 01 5539 Ultrahigh-frequency operational amplifier external compensation
The case outline shall be as designated in appendix C of MIL-M-385310, and as follows:
Outline letter Case outline C D-1 (14-lead DIP, ¼" × ¾") dual-in line package
Supply voltage (V+)- - - - - - - - - - - - - - - - ±12 V dc Power dissipation (PD) - - - - - - - - - - - - - - 550 mW Lead temperature (solder, 10 seconds) - - - - - - 300°C Thermal resistance: Junction to case (θJC) - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction to ambient (θJA)- - - - - - - - - - - - 110°C/W Junction temperature, (TJ) - - - - - - - - - - - - 150°C Storage temperature range- - - - - - - - - - - - - −65°C to +150°C
Supply voltage - - - - - - - - - - - - - - - - - - ±8 V dc Common mode voltage range- - - - - - - - - - - - - ±1.7 V dc Ambient operating temperature range (TA) - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
Document History