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NPFC - MIL-M-38510/203

MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 27 November 1985
Status: inactive
Page Count: 30
scope:

This specification covers the detail requirements for monolithic silicon, programmable read-only memory microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), or titanium-tungsten (TiW) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere (see freeze-out test of 4.2d).

The part number shall be in accordance with MIL-M-38510

The device type shall be as follows:

Device type Circuit 01, 03 256 word/4 bits per word PROM with uncommitted collector 02, 04 256 word/4 bits per word PROM with active pull-up and a third high impedance state output.

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) E D-2 (16-lead, ¼" × ⅞"), dual-in-line package F F-5 (16-lead, ¼" × ⅜"), flat package

Supply voltage - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range- - - - - - - - - - - - - −1.5 V dc at −10 mA to +5.5 V dc Storage temperature range- - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - 300°C Thermal resistance, junction-to-case (θJC):1/ See MIL-M-38510 Appendix C Output supply voltage- - - - - - - - - - - - −0.5 V dc to +VCC Output sink current- - - - - - - - - - - - - +100 mA Maximum power dissipation (PD) 2/- - - - - - 739 mW dc Maximum junction temperature (TJ) 3/ - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - 2.0 V dc Maximum low level input voltage (VIL)- - 0.8 V dc Fanout (each output) - - - - - - - - - - 16 mA 4/ Case operating temperature range (TC)- - −55°C To +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design application and logistic support of existing equipment.

Document History

Microcircuits, Digital, 1024 Bit Schottky, Bipolar, Programmable Read-Only Memory (Prom), Monolithic Silicon
A description is not available for this item.
June 22, 2012
Microcircuits, Digital, 1024 Bit Schottky, Bipolar, Programmable Read-Only Memory (Prom), Monolithic Silicon
A description is not available for this item.
September 18, 2007
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium...
January 19, 2006
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W) or titanium...
April 24, 2001
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/203
November 27, 1985
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, programmable read-only memory microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), or...
January 31, 1984
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
April 16, 1982
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
November 23, 1981
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
June 19, 1981
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
August 12, 1980
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
December 15, 1978
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
March 22, 1978
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
December 30, 1977
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
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