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DLA - SMD-5962-90611 REV A

MICROCIRCUITS, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 March 1992
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices"

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function tPD 01 32-Macrocell EPLD 35 ns 02 32-Macrocell EPLD 25 ns

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X D-15 (28-lead, 1.485" × .310" × .230"), dual-in-line package 2/ Y C-J7 (28-lead, .458" × .458" × .180"), J-leaded chip carrier 2/

Supply voltage to ground potential - - - - - - - −2.0 V dc to +7.0 V dc DC Input voltage - - - - - - - - - - - - - - - - −2.0 V dc to +7.0 V dc Maximum power dissipation 3- - - - - - - - - - - 1.5 W Lead temperature (soldering, 10 seconds) - - - - +260°C Thermal resistance, junction-to-case (θJC): Case outline X and Y - - - - - - - - - - - - - See Mil-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - −55°C to +125°C Endurance- - - - - - - - - - - - - - - - - - - - 25 erase/write cycles (minimum) Data retention - - - - - - - - - - - - - - - - - 10 years, (minimum)

Supply voltage (VCC) - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - 2.2 V dc minimum Input low voltage (VIL) - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

June 1, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
May 13, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 11, 2006
MICROCIRCUITS, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-90611 REV A
March 30, 1992
MICROCIRCUITS, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices"...
January 21, 1991
MICROCIRCUITS, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.

References

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