scope:

This drawing describes the requirements for monolithic silicon, low-power Schottky TTL, positive NAND logic gating microcircuits. This drawing provides for a level of microcircuit quality and reliability assurance for acquisition of microcircuits in accordance with MIL-M-38510.

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit 01 54LS132 Quadruple, 2-input Schmitt-Trigger positive NAND gates.

The case outlines shall be as designated in MIL-M-38510, appendix C and as follows:

Outline letter Case outline C D-1 (14-lead, ¼″ × ¾″), dual-in-line package D F-2 (14-lead, ¼″ × ⅜″), flat package

Supply voltage range - - - - - - - - - - - - - - - −0.5 V dc to 7.0 V dc Input voltage range- - - - - - - - - - - - - - - - −1.5 V dc at −18 mA to 5.5 V dc Storage temperature range- - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (P_D) 1/- - - - - - - - - 77 mW Lead temperature (soldering, 10 seconds) - - - - - +300°C Thermal resistance, junction-to-case (θ_JC):- - - - (See MIL-M-38510, appendix C) Junction temperature (T_J)- - - - - - - - - - - - - +175°C

Supply voltage (V_CC) - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (V_IH) - - - - - - 1.9 V dc Maximum low level input voltage (V_IL)- - - - - - - 0.5 V dc Case operating temperature range (T_C)- - - - - - - −55°C to +125°C

intended Use: