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DLA - SMD-5962-88548 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 11 September 1992
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (see 6.4) 900 gate EPLD 60 ns

The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline Q D-5 (40-lead, 2.096" × 0.620" × 0.225"), dual-in-line package 1/

Supply voltage range (VCC) - - - - - - - - - - - - - - −2.0 V dc to 7.0 V dc Programming supply voltage range (VPP) - - - - - - - - −2.0 V dc to +13.5 V dc DC input voltage (VI) 2/ - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.3 V dc Power dissipation (PD) - - - - - - - - - - - - - - - - 750 mW Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Junction temperature (TJ) - - - - - - - - - - - - - - +200°C Thermal resistance, junction-to-case (θJC): Case Q - - - - - - - - - - - - - - - - - - - - - - See-MIL-M-38510, appendix C

Supply voltage range (VCC) - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Input low voltage range (VIL) - - - - - - - - - - - −0.3 V dc to +0.8 V dc Input high voltage range (VIH) - - - - - - - - - - - +2.0 V dc to VCC +0.3 V dc Case operating temperature range (TC) - - - - - - - −55°C to +125°C Input rise time (TR) - - - - - - - - - - - - - - - - 500 ns maximum Input fall time (TF) - - - - - - - - - - - - - - - - 500 ns maximum Clock pins, rise time - - - - - - - - - - - - - - - 100 ns maximum Clock pins, fall time - - - - - - - - - - - - - - - 100 ns maximum

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 6, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 31, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88548 REV A
September 11, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
May 19, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.

References

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