DLA - DESC-DWG-89009
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
| Organization: | DLA |
| Publication Date: | 19 December 1989 |
| Status: | inactive |
| Page Count: | 26 |
scope:
This drawing describes the requirements for N-channel, enhancement mode MOSFET, power transistor specifically intended for use in high density power switching applications. Two levels of product assurance are provided for each device type, with avalanche energy rating (EAS and EAR) and maximum avalanche current (IAR).
The complete part number shall be as shown in the following example:
The device types shall identify the polarity and voltage of the devices as follows: The TX and TXV suffix relates to the JANTX and JANTXV level requirements of MIL-S-19500.
Device type JEDEC number Figure number 89009-2N7119TX, TV 2N7119 TO-204AA 89009-2N7120TX, TV 2N7120 TO-204AA 89009-2N7121TX, TV 2N7121 TO-204AA 89009-2N7122TX, TV 2N7122 TO-204AA
Primary electrical characteristics at TC = +25°C.
intended Use:
MOSFETS conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for OEM... View More
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