DLA - MIL-PRF-19500/702A
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
inactive
| Organization: | DLA |
| Publication Date: | 18 January 2005 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
April 26, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7482, 2N7483, AND 2N7484, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
June 24, 2016
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7482, 2N7483, AND 2N7484, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
February 26, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
May 21, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
January 14, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 30, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
MIL-PRF-19500/702A
January 18, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 21, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7482T3, 2N7483T3 AND 2N7484T3 JANTXVR, F, G AND H AND JANSR, F, G AND H
A description is not available for this item.
November 28, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7482T3, 2N7483T3 AND 2N7484T3 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for an N-Channel, enhancement mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...