DLA - SMD-5962-88552 REV D
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 4 January 1994 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete PIN shall be as shown in the following example:
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function Access time 01 100 ns 02, 07 70 ns 03, 08 See 6.4 32K × 8 low power CMOS SRAM 55 ns 04, 09 45 ns 05 35 ns 06 25 ns 10 20 ns 11 17 ns 12 15 ns
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z CDFP3-F28 28 Flat pack U CDIP3-T28 or GDIP4-T28 28 Dual-in-line T CDFP4-F28 28 Flat pack M CQCC3-N28 28 Rectangular leadless chip carrier N GDFP2-F28 28 Flat pack
The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Supply voltage range (VCC) . . . . . . . . . . . . . . . . . −0.5 V dc to +7.0 V dc 2/ Input voltage range . . . . . . . . . . . . . . . . . . . . −0.5 V dc to +6.0 V dc Storage temperature range . . . . . . . . . . . . . . . . . −65°C to +150°C Thermal resistance, junction-to-case (θJC) . . . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . . +150°C 3/ Power dissipation (PD) . . . . . . . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . +260°C
Supply voltage range (VCC) . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc 1/ Ground voltage (VSS) . . . . . . . . . . . . . . . . . . . . 0 V dc Input high voltage (VIH) . . . . . . . . . . . . . . . . . . +2.2 V dc to VCC +0.5 V dc Input low voltage (VIL) . . . . . . . . . . . . . . . . . . −0.5 V dc to .8 V dc Case operating temperature (TC) . . . . . . . . . . . . . . −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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