NPFC - MIL-M-38510/178
MICROCIRCUITS, DIGITAL, CMOS, MULTIPLEXERS/DEMULTIPLEXERS, MONOLITHIC SILICON, POSITIVE LOGIC
| Organization: | NPFC |
| Publication Date: | 30 April 1984 |
| Status: | active |
| Page Count: | 90 |
scope:
This specification covers the detail requirements for monolithic, silicon, CMOS logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.
The part number shall be in accordance with MIL-M-38510.
The device type shall be as follows:
Device type Circuit 01 Single 15-channel MUX/DEMUX 02 Differential 8-channel MUX/DEMUX 03 Quad 2-line-to-1-line data selector/MUX
The device class shall be the product assurance level as defined in MIL-M-38510.
The case outline shall be designated as follows:
Outline letter Case outline (see MIL-M-38510, appendix C) E D-2 (16-lead, ¼" × ⅞"), dual-in-line package F F-5 (16-lead, ¼" × ⅜"), flat package J D-3 (24-lead, ½" × 1-¼"), dual-in-line package K F-6 (24-lead, ⅜" × ⅝"), flat package Z F-8 (24-lead, ¼" × ⅜"), flat package X F-5 (16-lead, ¼" × ⅜"), flat package, except A dimension = 0.1" (2.54 mm) max Y F-6 (24-lead, ⅜" × ⅝"), flat package, except A dimension = 0.1" (2.54 mm) max U F-8 (24-lead, ¼" × ⅜"), flat package, except A dimension = 0.1" (2.54 mm) max
NOTES:
1. As an exception to nickel plate or undercoating paragraph of MIL-M-38510, for case outlines X, Y, and U only, the leads of bottom brazed ceramic packages (i.e., configuration 2 of case outlines F-5, F-6, and F-8) may have electroless nickel undercoating which shall be 50 to 200 microinches (1.27 to 5.08 µm) thick provided the lead finish is hot solder dip (i.e., finish letter A) and provided that, after any lead forming, an additional hot solder dip coating is applied which shall extend from the outer tip of the lead to no more than 0.015 inch (0.38 mm) from the package edge.
2. For bottom or side brazed packages, case outlines F, Y, and U only, the S1 dimension may go to .000 inch (.00 mm) minimum. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: George C, Marshall Space Flight Center, National Aeronautics and Space Administration, ATTN: EG02, Marshall Space Flight Center, AL 35812 by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Supply voltage range (VDD-VSS)- - - - - - −0.5 V to +18 V Input current (each input)- - - - - - - - ±10 mA Input voltage range - - - - - - - - - - - (VSS - 0.5) ≤ VI ≤ (VDD + 0.5) Storage temperature range - - - - - - - - −65°C to +175°C Maximum power dissipation (PD) - - - - - 200 mW Lead temperature (soldering, 10 seconds)- +300°C Thermal resistance, junction-to-case- - - (See MIL-M-38510, appendix C) Junction temperature (TJ) - - - - - - - - +175°C
Supply voltage range (VDD-VSS)- - - - - - - 4.5 V to 15 V Low level input voltage range (VIL) - - - - 0-1.5 V dc @ VDD = 5 V dc, VOL = 10% VDD, VOH = 90% VDD, 0-4.0 V dc @ VDD = 15 V dc, 0-2.0 V dc @ VDD = 10 V dc High level input voltage range (VIH)- - - - 3.5-5.0 V dc @ VDD = 5 V dc, VOL = 10% VDD, VOH = 90% VDD, 11.0-15.0 V dc @ VDD = 15 V dc, 8.0-10.0 V dc @ VDD = 10 V dc Ambient operating temperature range (TA)- - −55°C to +125°C
intended Use:
Microcircuits conforming to this specification are intended for original equipment design application and logistic support of existing equipment.
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