scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 SG3081 High current NPN transistor array

The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline E D-2 (16-lead, .840" × .310" × .210"), dual-in-line package

Collector-to-emitter voltage (V_CEO)- - - - - - - - - 16 V dc Collector-to-base voltage (V_CBO) - - - - - - - - - - 20 V dc Collector-to-substrate voltage (V_CSO)- - - - - - - - 20 V dc Emitter-to-base voltage (V_EBO) - - - - - - - - - - - 5.0 V dc Collector current (I_C) - - - - - - - - - - - - - - - 100 mA Base current (I_B) - - - - - - - - - - - - - - - - - 20 mA Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - +300°C Power dissipation (P_D): Any one transistor - - - - - - - - - - - - - - - - 500 mW Total package - - - - - - - - - - - - - - - - - - 750 mW 2/ Thermal resistance, junction-to-case (θ_JC) - - - - - See MIL-W-38510, appendix C Junction temperature (T_J)- - - - - - - - - - - - - - +150°C

Ambient operating temperature range (T_A)- - - - - - - - −55°C to +125°C

intended Use: