NPFC - MIL-PRF-19500/575
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US, JAN, JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 2 November 1998 |
| Status: | inactive |
| Page Count: | 15 |
scope:
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500.
See figures 1 and 2.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
October 31, 2023
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, AXIAL LEADED AND SURFACE MOUNT, TYPES 1N6512 THROUGH 1N6519 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
March 24, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, AXIAL LEADED AND SURFACE MOUNT, TYPES 1N6512 THROUGH 1N6519 JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as...
June 26, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, AXIAL LEADED AND SURFACE MOUNT, TYPES 1N6512 THROUGH 1N6519 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
September 20, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, AXIAL LEADED AND SURFACE MOUNT, TYPES 1N6512 THROUGH 1N6519 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
August 13, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
August 13, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
November 8, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
August 29, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-PRF-19500/575
November 2, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
December 8, 1995
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US JANTX, JANTXV, AND JANS
A description is not available for this item.
April 3, 1995
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US JANTX, JANTXV, AND JANS
A description is not available for this item.
September 30, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES IN6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US JANTX, JANTXV, AND JANS
This specification covers the detail requirements for silicon, high voltage, fast recovery power rectifier diodes. Three levels of product assurance are provided for each device as specified in...
April 6, 1989
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE 1N6512 THROUGH lN6519 1N6512U THROUGH 1F16519U JANTX, JANTXV, ANO JANS
A description is not available for this item.