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IEC 60747-8-4

Discrete semiconductor devices Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications

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Organization: IEC
Publication Date: 1 September 2004
Status: inactive
Page Count: 130
ICS Code (Transistors): 31.080.30
scope:

This part of IEC 60747 gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes.

- Type B depletion (normally on) type.

- Type C enhancement (normally off) type.

NOTE 1 MOSFETs for some applications may not have inverse diode characteristics in the data sheet. Special circuit element structures to eliminate body diode are under development for such applications. MOSFET applications such as motor control equipment need to specify the inverse diode characteristics in the MOSFET to use the inverse diode as a free wheeling diode.

NOTE 2 MOSFET is classified as a kind of insulated gate field-effect transistor (IGFET) in IEC 60747-8.

NOTE 3 The graphical symbol only for type C is used in this standard. It equally applies for the measurement of type B devices.

Document History

IEC 60747-8-4
September 1, 2004
Discrete semiconductor devices Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
This part of IEC 60747 gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes. - Type B depletion (normally on) type. - Type...

References

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