DLA - SMD-5962-86885 REV C
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUS TRANSCEIVER/REGISTER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 6 October 1992 |
| Status: | inactive |
| Page Count: | 19 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete PIN shall be as shown in the following example:
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function 01 54HC646 Octal noninverting three-state bus transceiver/register
The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case outline J D-3 (24-lead, 1.290" × .610" × .225"), dual-in-line package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package
Supply voltage range - - - - - - - - - - - - −0.6 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC output voltage - - - - - - - - - - - - - −0 5 V dc to VCC +0.5 V dc Clamp diode current - - - - - - - - - - - - ±20 mA DC output current (per pin) - - - - - - - - ±35 mA DC VCC or GND current (per pin) - - - - - - ±70 mA Storage temperature range- - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - 500 mW 2/ Lead temperature (soldering, 10 seconds) - - +260°C Thermal resistance, junction-to-case (θJC): See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - +175°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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