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ASTM F978

STANDARD TEST METHOD FOR CHARACTERIZING SEMICONDUCTOR DEEP LEVELS BY TRANSIENT CAPACITANCE TECHNIQUES

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Organization: ASTM
Publication Date: 27 March 1986
Status: inactive
Page Count: 8
ICS Code (Semiconducting materials): 29.045

Document History

January 10, 2002
Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques
This test method covers three procedures for determining the density, activation energy, and prefactor of the exponential expression for the emission rate of deep-level defect centers in...
January 1, 1990
Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques
1. Scope 1.1 This test method covers three procedures for determining the density, activation energy, and prefactor of the exponential expression for the emission rate of deep-level defect centers in...
ASTM F978
March 27, 1986
STANDARD TEST METHOD FOR CHARACTERIZING SEMICONDUCTOR DEEP LEVELS BY TRANSIENT CAPACITANCE TECHNIQUES
A description is not available for this item.
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