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DLA - SMD-5962-87649

MICROCIRCUITS, DIGITAL, 32K X 8, NMOS EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 19 January 1988
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (see 6.4) (32K × 8 EEPROM) 350 ns 02 (see 6.4) (32K × 8 EEPROM) 300 ns 03 (see 6.4) (32K × 8 EEPROM) 250 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X D-10 (28-lead, ½" × 1 ⅜"), dual-in-line package Y C-12 (32-terminal, .450" × .550"), rectangular chip carrier package Z See figure 1 (28-lead, ⅜" × ¾"), flat package

Temperature under bias - - - - - - - - - - - - - - - - - −65°C to +135°C Storage temperature range - - - - - - - - - - - - - - - - −65°C to +150°C Voltage on any pin with respect to ground - - - - - - - - −1.0 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - - - - - - 5 mA Thermal resistance, junction-to-case (θJC): Cases X and Y - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case Z- - - - - - - - - - - - - - - - - - - - - - - - - 15°C/W Lead temperature (soldering, 10 seconds)- - - - - - - - - +300°C Input voltage range - - - - - - - - - - - - - - - - - - - −0.3 V dc to +6.5 V dc Endurance (minimum) - - - - - - - - - - - - - - - - - - - 10,000 cycles Data retention (minimum)- - - - - - - - - - - - - - - - - 10 years

Operating supply voltage - - - - - - - - - - - - - - - - −5.0 V dc ±10% Case operating temperature range (TC) - - - - - - - - - - −55°C to +125°C High level input voltage - - - - - - - - - - - - - - - - +2.0 V dc to VCC +1.0 V dc Low level input voltage - - - - - - - - - - - - - - - - - −0.1 V dc to +0.8 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

August 7, 2017
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 32K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 20, 2010
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 32K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87649
January 19, 1988
MICROCIRCUITS, DIGITAL, 32K X 8, NMOS EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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