UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-86871 REV C

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 6 July 1992
Status: inactive
Page Count: 12
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as. shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54ALS38. Quadruple 2-input positive-NAND buffers with open collector outputs

The case outlines shall be as designated in appendix C of MIL-M-38510, and is follows:

Outline letter Case outline B F-3 (14-lead, .280" × .200" × .070"), flat package. C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - - −0.5 V dc minimum to +7.0 V dc maximum Input voltage range- - - - - - - - - - - - - - - - - - −1.5 V dc at −18 mA to +7.0 dc Storage temperature range- - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) per device 1/ 42.9 mW Lead temperature (soldering, 10 seconds) - - - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Maximum high level output voltage (VOH)- - - - - - - - 5.5 V dc Minimum high level input voltage (VIH) - - - - - - - - 2.0 V dc Maximum low level input voltage (VIL): VIL = +125°C- - - - - - - - - - - - - - - - - - - - 0.7 V dc VIL = +25°C - - - - - - - - - - - - - - - - - - - - 0.8 V dc VIL = −55°C - - - - - - - - - - - - - - - - - - - - 0.8 V dc Case operating temperature range (TC)- - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

September 7, 2018
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS,MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 9, 2013
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS,MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 14, 2006
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-86871 REV C
July 6, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 3, 1989
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
April 14, 1988
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
June 27, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS, MONOLITHIC SILICON
A description is not available for this item.

References

Advertisement