Standard Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography
|Publication Date:||10 June 1999|
|ICS Code (Semiconducting materials):||29.045|
1.1 These test methods cover the identification and quantification of organic contaminants on silicon wafer surfaces using a gas chromatograph interfaced to a mass spectrometer (GC-MS) or a phosphorus selective detector, or both.
1.2 These test methods describe the apparatus and related procedures for sample preparation and analyses by thermal desorption gas chromatography (TD-GC).
1.3 The range of detection limits of these test methods depend on the target organic compounds, for example, the range of detection limits will be subpicogram to nanogram level of hydrocarbons (C8 to C28)/ 1 cm2 of a silicon wafer surface.
1.4 These test methods can be used for polished silicon wafers, or silicon wafers with oxide films.
1.5 One of two methods can be performed. Method A is performed on cleaved wafers. Method B is performed on full wafers. The detailed procedures of Method A and Method B, as well as, the difference between them, are described in Section 4 and 7.
1.6 Safety precautions must be followed when handling organic solvents and compounds, hot materials subjected to propane flame, the propane flame itself, wafer thermal desorption systems, rapid thermal annealer, or a high temperature furnace.
1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.