DS/EN 60539-1
Directly heated negative temperature coefficient thermistors - Part 1: Generic specification
inactive
| Organization: | DS |
| Publication Date: | 9 July 2002 |
| Status: | inactive |
| Page Count: | 54 |
| ICS Code (Thermistors): | 31.040.30 |
scope:
This part of IEC 60539 is applicable to directly heated negative temperature coefficient thermistors, typically made from transition metal oxide materials with semiconducting properties.
Document History
September 26, 2017
Directly heated negative temperature coefficient thermistors – Part 1: Generic specification
IEC 60539-1:2016 is applicable to directly heated negative temperature coefficient thermistors, typically made from transition metal oxide materials with semiconducting properties. It establishes...
July 29, 2016
Directly heated negative temperature coefficient thermistors – Part 1: Generic specification
IEC 60539-1:2016 is applicable to directly heated negative temperature coefficient thermistors, typically made from transition metal oxide materials with semiconducting properties. It establishes...
May 27, 2008
Directly heated negative temperature coefficient thermistors – Part 1: Generic specification
This part of IEC 60539 is applicable to directly heated negative temperature coefficient thermistors, typically made from transition metal oxide materials with semiconducting properties. It...
January 10, 2007
Fixed capacitors for use in electronic equipment -- Part 1: Generic specification
A description is not available for this item.
DS/EN 60539-1
July 9, 2002
Directly heated negative temperature coefficient thermistors - Part 1: Generic specification
This part of IEC 60539 is applicable to directly heated negative temperature coefficient thermistors, typically made from transition metal oxide materials with semiconducting properties.
Directly heated negative temperature coefficient thermistors - Part 1: Generic specification
This part of IEC 60539 is applicable to directly heated negative temperature coefficient thermistors, typically made from transition metal oxide materials with semiconducting properties. It...
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