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DLA - SMD-5962-96520 REV A

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 25 November 1996
Status: inactive
Page Count: 16

Document History

November 20, 2020
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are...
October 23, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available...
November 21, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 11, 2001
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-96520 REV A
November 25, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
May 30, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
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