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DLA - SMD-5962-87788 REV B

MICROCIRCUIT, MEMORY, DIGITAL 256 X 4-BIT BIPOLAR PROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 17 January 1990
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 27S21, 82S129 256 × 4-bit bipolar PROM (three-state) 60 ns 02 27S21A, 82S129A 256 × 4-bit bipolar PROM (three-state) 40 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline E D-2 (16-lead, .840" × .310" × .200"), dual-in-line package F F-5 (16-lead, .440" × .285" × .085"), flat package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - - −0.5 V dc to + 5.5 V dc Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) per device 1/ - - - - 715 mW Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC) 2/- - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - +175°C DC voltage applied to outputs range (except during programming) - - - - - - - - - - - - - - - −0.5 V dc to +5.5 V dc maximum DC voltage applied to outputs during programming - - - - - - - - - - - - - - - - - - - 21 V dc Output current into outputs during programming (maximum duration of 1 second) - - - - 250 mA DC input current range - - - - - - - - - - - - - - - −30 mA to +5.0 mA

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - - 2.0 V dc Maximum low level input voltage (VIL) - - - - - - - 0.8 V dc Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 3, 2024
MICROCIRCUIT, MEMORY, DIGITAL 256 X 4-BIT, BIPOLAR PROM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.  
May 28, 2013
MICROCIRCUIT, MEMORY, DIGITAL 256 X 4-BIT, BIPOLAR PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 30, 2007
MICROCIRCUIT, MEMORY, DIGITAL 256 X 4-BIT, BIPOLAR PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 3, 2001
MICROCIRCUIT, MEMORY, DIGITAL 256 X 4-BIT BIPOLAR PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87788 REV B
January 17, 1990
MICROCIRCUIT, MEMORY, DIGITAL 256 X 4-BIT BIPOLAR PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 16, 1988
MICROCIRCUIT, MEMORY, DIGITAL 256 X 4-BIT BIPOLAR PROM, MONOLITHIC SILICON
A description is not available for this item.
March 1, 1988
MICROCIRCUIT, MEMORY, DIGITAL 256 X 4-BIT BIPOLAR PROM, MONOLITHIC SILICON
A description is not available for this item.
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