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DLA - SMD-5962-38267 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 29 June 1993
Status: inactive
Page Count: 42
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 32 Dual in-line Y CQCC1-N44 44 Rectangular chip carrier Z See figure 1 32 Flat package U CQCC1-N32 32 Rectangular chip carrier T See figure 1 30 Grid array W See figure 1 36 Grid array

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc 3/ Operating case temperature range - - - - - - - - - - −55°C to +125°C Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (ΘJC): Cases Y and U - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Cases X, T, and W - - - - - - - - - - - - - - - - 21°C/W 4/ Case Z - - - - - - - - - - - - - - - - - - - - - - 18°C/W 4/ Maximum power dissipation (PD) - - - - - - - - - - - 1.0 watts Junction temperature (TJ) - - - - - - - - - - - - - - +175°C 5/ Endurance - - - - - - - - - - - - - - - - - - - - - - 10,000 cycles/byte (minimum) Data retention - - - - - - - - - - - - - - - - - - - 20 years minimum

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Supply voltage (VSS) - - - - - - - - - - - - - - - - 0.0 V dc High level input voltage range (VIH) - - - - - - - - 2.0 V dc to VCC + 1.0 V dc Low level input voltage range (VIL) - - - - - - - - - −0.1 V dc to 0.8 V dc Case operating temperature range (TC) - - - - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - 6/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

October 20, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
January 22, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
December 10, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 15, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 5, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON
A description is not available for this item.
October 6, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
July 22, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
June 27, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON
A description is not available for this item.
September 19, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON
A description is not available for this item.
March 29, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-38267 REV A
June 29, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
July 12, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT EEPROM, MONOLITHIC SILICON
A description is not available for this item.
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