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NPFC - MIL-M-38510/41

MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 9 August 1983
Status: active
Page Count: 17
scope:

This specification covers the detail requirements for monolithic silicon, TTL, low-power, AND-OR-INVERT logic gating microcircuits. One product assurance class and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The complete part number shall be in accordance with MIL-M-38510, with the exception that the "JAN" or "J" certification shall not be used.

The device types shall be as follows:

Device type Circuit 01 Dual, 2-wide, AND-OR-INVERT gate 02 4-wide, 3-2-2-3 input AND-OR-INVERT gate 03 2-wide, 4 input AND-OR-INVERT gate

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, ⅛" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package

Supply voltage range - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range- - - - - - - - - - - - - - - 0 V dc to +5.5 V dc Storage temperature range- - - - - - - - - - - - −65°C to +150°C Maximum power dissipation, per device (PD) 1/: Device type 01 - - - - - - - - - - - - - - - - 8.75 mW dc Device type 02 - - - - - - - - - - - - - - - - 6.3 mW dc Device type 03 - - - - - - - - - - - - - - - - 4.5 mW dc Lead temperature (soldering, 10 seconds) - - - - +300°C Thermal resistance, junction-to-case (θJC): Cases A, B, and D- - - - - - - - - - - - - - - 0.09°C/mW Case C - - - - - - - - - - - - - - - - - - - - 0.08°C/mW Junction temperature (TJ)- - - - - - - - - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage range (VCC) - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Minimum high-level input voltage (VIH) - +2.0 V dc Maximum low-level input voltage (VIL) - +0.7 V dc Normalized fanout (each output) 2/- - - 10 maximum Case operating temperature range (TC) - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for logistic support of existing equipment.

Document History

MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
November 30, 1988
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/41
August 9, 1983
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, TTL, low-power, AND-OR-INVERT logic gating microcircuits. One product assurance class and a choice of case outlines and lead...
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
June 17, 1976
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
January 6, 1975
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
August 30, 1974
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
May 1, 1974
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
October 15, 1973
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
October 15, 1973
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
May 31, 1973
MICROCIRCUITS, DIGITAL, TTL, LOW-POWER, AND-OR-INVERT GATES MONOLITHIC SILICON
A description is not available for this item.
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