NPFC - MIL-S-19500/551
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JANTX, JANTXV
| Organization: | NPFC |
| Publication Date: | 20 August 1991 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This specification covers the detail requirements for 500-watt peak pulse, power, silicon transient voltage suppressor diodes. Two levels of product assurance are provided for each device as specified in MIL-S-19500. Characterization for standard and inverse polarity transients are included.
See figures 1 and 2.
Maximum ratings are as shown in columns 5 through 8 of table V herein and as follows:
PR = 2.5 W (derate at 16.7 mW/°C above TA = +25°C for nonsurface mount devices or 10 mW/°C above TA = +25°C for surface mount devices).
PPR = 500 W (see figure 3) at tp = 1 ms.
IFSM = 80 A (pk) at tp = 8.33 ms (TA = +25°C).
−55°C ≤ TOP ≤ +175°C; −55°C ≤ TSTG ≤ +200°C (ambient).
Primary electrical characteristics are as shown in columns 2 and 4 of table V herein. These characteristics apply to all package types. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5280 by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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