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DLA - DESC-DWG-82010 REV D

MICROCIRCUIT, DIGITAL, NMOS, 65,536 X 1 BIT, DYNAMIC, RAM

inactive, Most Current
Organization: DLA
Publication Date: 28 April 1987
Status: inactive
Page Count: 21
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit functions as follows:

Device type Generic number Circuit Access time Refresh 01 (See 6.4) 65,536 × 1-bit RAM 150 ns 128 cycles (1 ms) 02 (See 6.4) 65,536 × 1-bit RAM 150 ns 128 cycles (2 ms) 03 (See 6.4) 65,536 × 1-bit RAM 200 ns 128 cycles (2 ms) 04 (See 6.4) 65,536 × 1-bit RAM 150 ns 256 cycles (4 ms) 05 (See 6.4) 65,536 × 1-bit RAM 200 ns 256 cycles (4 ms) 06 (See 6.4) 65,536 × 1-bit RAM 150 ns 256 cycles (4 ms) 07 (See 6.4) 65,536 × 1-bit RAM 200 ns 256 cycles (4 ms) 08 (See 6.4) 65,536 × 1-bit RAM 120 ns 256 cycles (4 ms) 09 (See 6.4) 65,536 × 1-bit RAM 150 ns 128 cycles (2 ms) 10 (See 6.4) 65,536 × 1-bit RAM 200 ns 128 cycles (2 ms)

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline E D-2 (16-lead, ¼″ × ⅞″), dual-in-line package Z C-10 (18-terminal, .285″ × .425″), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - −1.5 to +7.0 V dc Storage temperature range- - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) (minimum cycle time)- - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 5 seconds) - - - - +270°C Thermal resistance, junction-to-case (θJC): Case E - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case Z - - - - - - - - - - - - - - - - - - - - 60°C/W 1/ Junction temperature (TJ)- - - - - - - - - - - - +150°C Short circuit output current - - - - - - - - - - 150 mA

Supply voltage- - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Maximum low-level input voltage (VIL): Device types 01, 02, and 03 - - - - - - - - - −1.5 V dc to 0.8 V dc Device types 04, 05, 06, 07, and 08 - - - - - −0.6 V dc to 0.8 V dc Device types 09 and 10- - - - - - - - - - - - −1.0 V dc to 0.8 V dc Maximum high-level input voltage (VIH): Device types 01, 02, and 03 - - - - - - - - - 2.4 V dc to 6.5 V dc Device types 04, 05, 06, 07, and 08 - - - - - 2.4 V dc to 5.8 V dc Device types 09 and 10- - - - - - - - - - - - 2.4 V dc to VCC +1.0 V dc Refresh cycle time: Device type 01- - - - - - - - - - - - - - - - 1.0 ms Device types 02, 03, 09, and 10 - - - - - - - 2.0 ms Device types 04, 05, 06, 07, and 08 - - - - - 4.0 ms Case operating temperature range: Device types 01, 02, 03, 06, 07, 08, 09, and 10- - - - - - - - - - - - - - - - - - - −55°C to +110°C Device types 04 and 05- - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

DESC-DWG-82010 REV D
April 28, 1987
MICROCIRCUIT, DIGITAL, NMOS, 65,536 X 1 BIT, DYNAMIC, RAM
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
May 23, 1986
MICROCIRCUIT, DIGITAL, NMOS, 65,536 X 1 BIT, DYNAMIC, RAM
A description is not available for this item.
January 20, 1986
MICROCIRCUIT, DIGITAL, NMOS, 65,536 X 1 BIT, DYNAMIC, RAM
A description is not available for this item.
October 7, 1983
MICROCIRCUIT, DIGITAL, NMOS, 65,536 X 1 BIT, DYNAMIC, RAM
A description is not available for this item.
May 28, 1982
MICROCIRCUIT, DIGITAL, NMOS, 65,536 X 1 BIT, DYNAMIC, RAM
A description is not available for this item.
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