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ASTM F1153

STANDARD TEST METHOD FOR CHARACTERIZATION OF METAL-OXIDE-SILICON (MOS) STRUCTURES BY CAPACITANCE-VOLTAGE MEASUREMENTS

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Organization: ASTM
Publication Date: 27 May 1988
Status: inactive
Page Count: 7
ICS Code (Capacitors in general): 31.060.01

Document History

May 15, 1992
Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements
This test method covers procedures for measurement of metal-oxide-silicon (MOS) structures for flatband capacitance, flatband voltage, average carrier concentration within a depletion length of the...
May 15, 1992
Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements
1. Scope 1.1 This test method covers procedures for measurement of metal-oxide-silicon (MOS) structures for flatband capacitance, flatband voltage, average carrier concentration within a depletion...
ASTM F1153
May 27, 1988
STANDARD TEST METHOD FOR CHARACTERIZATION OF METAL-OXIDE-SILICON (MOS) STRUCTURES BY CAPACITANCE-VOLTAGE MEASUREMENTS
A description is not available for this item.
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