DLA - DESC-DWG-89026
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
inactive
| Organization: | DLA |
| Publication Date: | 19 December 1989 |
| Status: | inactive |
| Page Count: | 1 |
Document History
January 10, 2000
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
A description is not available for this item.
December 11, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
This drawing describes the requirements for N-channel, enhancement mode MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are...
DESC-DWG-89026
December 19, 1989
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
A description is not available for this item.