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DLA - SMD-5962-93157 REV D

MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K X 8-BIT

inactive
Organization: DLA
Publication Date: 22 June 1998
Status: inactive
Page Count: 22
scope:

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WS256K8-120CQ SRAM, 256K × 8-bit 120 ns 02 WS256K8-100CQ SRAM, 256K × 8-bit 100 ns 03 WS256K8-85CQ SRAM, 256K × 8-bit 85 ns 04 WS256K8-70CQ SRAM, 256K × 8-bit 70 ns 05 WS256K8-55CQ SRAM, 256K × 8-bit 55 ns 06 WS256K8-45CQ SRAM, 256K × 8-bit 45 ns 07 WS256K8-35CQ SRAM, 256K × 8-bit 35 ns 08 WS256K8-25CQ SRAM, 256K × 8-bit 25 ns 09 WS265K8-20CQ SRAM, 256K × 8-bit 20 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation H or K Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 32 Dual-in-line, dual cavity Y See figure 1 32 Dual-in-line, single cavity

The lead finish shall be as specified in MIL-PRF-38534.

Supply voltage range (VCC) .............................. −05 V dc to +7.0 V dc Signal voltage range (any pin) .......................... −05 V dc to +7.0 V dc Power dissipation (PD) .................................. 1 W Storage temperature range ............................... −65°C to +150°C Lead temperature (soldering, 10 seconds) ................ +300°C

Supply voltage range (VCC) .............................. +4.5 V dc to +5.5 V dc Input low voltage range (VIL) ........................... −0.5 dc to +0.8 V dc Input high voltage range (VIH) .......................... +2.2 V dc to VCC +0.3 V dc Output low voltage, maximum (VOL) ....................... +0.4 V dc Output high voltage, minimum (VOH) ...................... +2.4 V dc Case operating temperature range (TC) ................... −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

December 10, 2020
MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K x 8-BIT
Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the...
April 2, 2002
MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K X 8-BIT
A description is not available for this item.
November 1, 1999
MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K X 8-BIT
This drawing contains hybrid and monolithic devices. Five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high...
SMD-5962-93157 REV D
June 22, 1998
MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K X 8-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
September 8, 1997
MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K X 8-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
February 21, 1997
MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K X 8-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...
September 27, 1996
MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K X 8-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...
April 1, 1993
MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K X 8-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...
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