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DLA - SMD-5962-89721 REV A

MICROCIRCUIT, LINEAR, HIGH CURRENT, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 20 May 1993
Status: inactive
Page Count: 11
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 HA-2529 Uncompensated high slew rate, high output current, operational amplifier

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Voltage between V+ and V− terminals . . . . . . . . . . . 40 V dc Differential input voltage. . . . . . . . . . . . . . . . 15 V dc Voltage at either input terminal. . . . . . . . . . . . . V+ to V− Peak output current (10% duty cycle). . . . . . . . . . . 90 mA Storage temperature range . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD): Case G. . . . . . . . . . . . . . . . . . . . . . . . . 670 mW 1/ Case P. . . . . . . . . . . . . . . . . . . . . . . . . 710 mW 2/ Case 2. . . . . . . . . . . . . . . . . . . . . . . . . 1350 mW 3/ Lead temperature (soldering, 10 seconds). . . . . . . . . +275°C Thermal resistance, junction-to-case (ΘJC). . . . . . . . See MIL-STD-1835 Thermal resistance, junction-to-ambient (ΘJA): Case G. . . . . . . . . . . . . . . . . . . . . . . . . 148°C/W Case P. . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W Case 2. . . . . . . . . . . . . . . . . . . . . . . . . 74°C/W Junction temperature (TJ) . . . . . . . . . . . . . . . . +175°C/W

Operating supply voltage . . . . . . . . . . . . . . . . ±15 V dc Common mode input voltage (VCM). . . . . . . . . . . . . ≤ V+ − V−)/2 Load resistance (RL) . . . . . . . . . . . . . . . . . . ≥ 5000 Ω Ambient temperature range (TA) . . . . . . . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 3, 2010
MICROCIRCUIT, LINEAR, HIGH CURRENT, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 15, 2001
MICROCIRCUIT, LINEAR, HIGH CURRENT, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89721 REV A
May 20, 1993
MICROCIRCUIT, LINEAR, HIGH CURRENT, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
December 16, 1992
MICROCIRCUIT, LINEAR, HIGH CURRENT, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
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