NPFC - MIL-S-19500/567
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY TYPE 1N6492 JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 13 April 1987 |
| Status: | inactive |
| Page Count: | 14 |
scope:
This specification covers the detail requirements for a silicon, fast recovery Schottky barrier semiconductor diode, intended for use as a power rectifier. Three levels of product assurance are provided for each device as specified in MIL-S-19500.
See figure 1, TO-205AF (T0-39, low profile).
At TC = 25°C, unless otherwise noted. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, RBE-2 Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
August 20, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6492, 1N6492U4, JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as...
November 17, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6492, 1N6492U4, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
December 10, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6492, 1N6492U4, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as...
February 8, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6492, 1N6492U4, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as...
September 12, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6492, 1N6492U4, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as...
November 28, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY TYPE 1N6492, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
July 20, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY TYPE 1N6492, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as...
July 26, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY TYPE 1N6492, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as...
December 7, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY TYPE 1N6492 JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-S-19500/567
April 13, 1987
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY TYPE 1N6492 JANTX, JANTXV, AND JANS
This specification covers the detail requirements for a silicon, fast recovery Schottky barrier semiconductor diode, intended for use as a power rectifier. Three levels of product assurance are...