IECQ - QC 750112
Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field- Effect Transistors, up to 5W and 1 GHz (IEC 747-8-1 ED 1)
inactive, Most Current
| Organization: | IECQ |
| Publication Date: | 1 January 1987 |
| Status: | inactive |
| Page Count: | 37 |
Document History
QC 750112
January 1, 1987
Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field- Effect Transistors, up to 5W and 1 GHz (IEC 747-8-1 ED 1)
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