NPFC - MIL-S-19500/429
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 31 August 1994 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This specification covers the detail requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in MIL-S-19500. Two levels of product assurance are provided each unencapsulated device type.
See figures 1, 2, 3 (D-5A), 4, and 5 (JANHC and JANKC).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: US Army Research Laboratory, ATTN: AMSRL-EP-RD, Fort Monmouth, NJ, 07703-5601 by using the Standardization Document Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
June 24, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
October 22, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance (JAN, JANTX, JANTXV,...
March 9, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance (JAN, JANTX, JANTXV,...
May 15, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each...
October 14, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each...
August 7, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each...
November 8, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each...
April 7, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each...
December 30, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in...
October 18, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in...
October 24, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
April 21, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500....
June 2, 1995
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
MIL-S-19500/429
August 31, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in MIL-S-19500. Two...
September 30, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for silicon, fast recovery power rectifier diodes. Five levels of product assurance are provided for each device as specified in MIL-S-19500.
See...
November 11, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV AND JANS
A description is not available for this item.
July 6, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
May 3, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
May 17, 1983
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 30, 1981
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621 AND 1N5623, JANS
A description is not available for this item.
April 20, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621 AND 1N5623, TX AND TXV
A description is not available for this item.
February 18, 1975
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, TX AND TXV
A description is not available for this item.
May 16, 1974
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
January 17, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, JAN, JANTX AND JANTXV TYPES 1N5615, 1N5617, 1N5619, 1N5621, AND 1N5623
A description is not available for this item.
April 2, 1971
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623 and TX1N5615, TX1N5617, TX1N5619, TX1N5621, TX1N5623
A description is not available for this item.