scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with MIL-H-38534. Two product assurance classes, military high reliability (device class H) and space application (device class K) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-H-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WF-1024K32-150HQ EPROM FLASH, 1024K X 32-bit 150 nS 02 WF-1024K32-100HQ EPROM FLASH, 1024K X 32-bit 100 nS

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation H or K Certification and qualification to MIL-H-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 66 Hex-in-line, single cavity, with standoffs Y See figure 1 66 Hex-in-line, single cavity, with standoffs Z See figure 1 68 Ceramic, quad flatpack, low profile

The lead finish shall be as specified in MIL-H-38534 for classes H and K. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range with respect to GND (V_CC) 2/ .......................... −2.0 V dc to +7.0 V dc Voltage range (any pin with respect to GND, except V_CC and V_PP) 2/.......... −2.0 V dc to +7.0 V dc V_PP Program voltage with Respect to GND during Block Erase/Byte Write 2/3/.. −2.0 V dc to +14.0 V dc Output short circuit current 4/............................................. 100 mA Storage temperature range .................................................. −65° C to +150° C Lead temperature (soldering, 10 seconds) ................................... +300° C Data retention ............................................................. 10 years minimum Endurance (write/erase cycles) ............................................. 10000 cycles

Supply voltage range (V_CC) ................................................. +4.5 V dc to +5.5 V dc Input low voltage range (V_IL) .............................................. −0.5 V dc to +0.8 V dc Input high voltage range (V_IH) ............................................. +2.0 V dc to V_CC+0.5 V dc Output low voltage, maximum (V_OL) .......................................... +0.45 V dc Output high voltage, minimum (V_OH) ......................................... +2.4 V dc Case operating temperature range (T_C) ...................................... −55° C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.