scope:

This specification covers the detail requirements for monolithic silicon, N-channel dynamic NMOS 16,384/1-bit random access memory microcircuits. Two product assurance classes (S and B) and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number (PIN) (see 6.7).

The device type shall be as shown in the following:

Device type Circuit organization Access time 01,04 (T_case = −55°C instant on to 16,384/1-bit RAM 200 ns +110°C operating) 02,05 (T_case = −55°C instant on to 16,384/1-bit RAM 250 ns +110°C operating) 03 (T_case = −55°C instant on to 16,384/1-bit RAM 200 ns (page mode +110°C operating) operation guaranteed)

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Case outline MIL-M-38510, appendix C, case outline E D-2 (16-lead, .840" × .310" × .200"), dual-in-line package F F-5 (16-lead, .390" × .260" × .085"), flat package Z See figure 1 (18-lead, .360" × .240" × .048"), leadless chip carrier package

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, RBE-2, Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Voltage on any pin relative to substrate: Device types 01 through 03 - - - - - - - - - - - −0.3 V to +20 V Device types 04 and 05 - - - - - - - - - - - - - −1.0 V to +7 V Power dissipation (minimum cycle time) - - - - - - 1.0 W maximum Thermal resistance (minimum cycle time) - - - - - - θ_JC = 15°C/W maximum Voltage on V_DD relative to V_SS: Device types 01 through 03 only - - - - - - - - - −1.0 V to +16 V Voltage on V_CC relative to V_SS: Device types 01 through 03 - - - - - - - - - - - −1.0 V to +15 V Device types 04 and 05- - - - - - - - - - - - - - −1.0 V to +7 V V_BB − V_SS (V_DD − V_SS > 0) Device types 01 through 03 - - - - - - - - - - - −0.3 V maximum Lead temperature (soldering, 5 seconds) - - - - - - 270°C maximum Maximum junction temperature, T_J - - - - - - - - - 150°C

The error rate shall not exceed 1 error in 5 × 10⁶ device operating hours, under the following test conditions:

a. Nominal power supplies.

b. T_C = 25°C.

c. Device in a checkerboard pattern.

d. Cycle time equal to 375 ns.

Supply voltages: Min Max Unit V_DD (device types 01 through 03) - - - - - - - - 10.8 16 V dc V_BB (device types 01 through 03) - - - - - - - - −4.5 −7 V dc V_CC - - - - - - - - - - - - - - - - - - - - - - 4.5 5.5 V dc V_SS - - - - - - - - - - - - - - - - - - - - - - 0 1/ 0 1/ V dc High level input voltages: Addresses (V_IH): Device types 01 through 03 - - - - - - - - - - 2.4 7.0 V dc Device types 04 and 05 - - - - - - - - - - - - 2.4 6.5 V dc Clocks (V_IHC): Device types 01 through 03 - - - - - - - - - - 2.7 7.0 V dc Device types 04 and 05 - - - - - - - - - - - - 2.7 6.5 V dc Data In (V_IH): Device types 01 through 03 - - - - - - - - - - 2.4 7.0 V dc Device types 04 and 05 - - - - - - - - - - - - 2.4 6.5 V dc Low level input voltage: All inputs (V_IL) - - - - - - - - - - - - - - - −1.0 0.8 V dc Refresh cycle time (t_REF)- - - - - - - - - - - - - 1.0 ms Operating case temperature - - - - - - - - - - - - −55 +110 °C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.