Standard Test Methods for Testing Photoresists Used in Microelectronic Fabrications
|Publication Date:||1 January 1984|
1.1 These test methods cover procedures for testing characteristics of photoresists used for selective masking in the fabrication of microelectronic circuits. The methods given are:
1.1.1 Method A, Specific Gravity--These methods cover the measurement of the relative weight of photoresist per unit volume. The methods are intended to apply to photoresist specimens taken from freshly opened containers and in the specific gravity range from 0.850 to 1.500, inclusive.
1.1.2 Method B, Viscosity--This method covers the measurement of resist viscosity by either of two common techniques. Kinematic viscosity is determined by either of two common techniques. Kinematic viscosity is determined (Procedure B (1)) by flowing the resist through a capillary tube viscometer. Dynamic viscosity is determined (Procedure B (2)) with a rotational type viscometer. Calculations are given to convert either type of measured viscosity to the other type (kinematic or dynamic).
1.1.3 Method C, Solids Content--This method covers the determination of the nonvolatile content of solutions of photoresists in volatile organic solvents. The method is intended to be used in conjunction with the standard laboratory or manufacturing procedures of the user,
NOTE 1--A Pin-Hole Test, which is a use test and not a test of a physical property of photoresist solution, is described in Appendix Xl. This appendix is included for information on a procedure for checking the ability of a photoresist coating to withstand etchants employed in fabricating microelectronic devices.
1.2 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 4.