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DLA - SMD-5962-87613

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4 INPUT NAND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 22 June 1987
Status: inactive
Page Count: 12
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54AC20 Dual 4 input NAND gate 02 54AC11020 Dual 4 input NAND gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat-package 2 C-2 (20-terminal, .350" × .350"), square chip carrier

Supply voltage range 1/ - - - - - - - - - - - - - - - - −0.5 V dc to +6.0 Vdc DC input voltage 1/ - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC output voltage 1/ - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Clamp diode current - - - - - - - - - - - - - - - - - - ±20 mA DC output current (per pin) - - - - - - - - - - - - - - ±50 mA DC VCC or GND current (per pin) - - - - - - - - - - - - ±100 mA Storage temperature range - - - - - - - - - - - - - - - −65°C to 150°C Maximum power dissipation PD - - - - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds)- - - - - - - - +245°C Thermal resistance, junction-to-case (OJC): Cases C and D - - - - - - - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Case 2 - - - - - - - - - - - - - - - - - - - - - - - - 60°C/W 2/ Junction temperature (TJ) 3/ - - - - - - - - - - - - - +175°C

Supply voltage (VCC) 4/ - - - - - - - - - - 3.0 V dc to 5.5 V dc Input voltage - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - −55°C to +125°C Input rise or fall times: VCC = 3.6 V - - - - - - - - - - - - - - - 0 to 116 ns (10-90 percent, 40 ns/V) VCC = 5.5 V - - - - - - - - - - - - - - - 0 to 88 ns (10-90 percent, 20 ns/V)

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 5, 2021
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
April 23, 2014
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
May 15, 2008
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 19, 2002
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4 INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
July 17, 2001
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4 INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87613
June 22, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4 INPUT NAND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
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