UNLIMITED FREE ACCESS TO THE WORLD'S BEST IDEAS

close
Already an Engineering360 user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your Engineering360 Experience

close
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

IEC 60747-8-1

Semiconductor Devices - Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field-Effect Transistors, up to 5 W and 1 GHz

inactive
Buy Now
Organization: IEC
Publication Date: 1 December 1987
Status: inactive
Page Count: 38
ICS Code (Transistors): 31.080.30

Document History

IEC 60747-8-1
December 1, 1987
Semiconductor Devices - Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field-Effect Transistors, up to 5 W and 1 GHz
A description is not available for this item.

References

Advertisement