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ASTM F398

Standard Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum

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Organization: ASTM
Publication Date: 15 May 1992
Status: inactive
Page Count: 10
ICS Code (Semiconducting materials): 29.045
scope:

1. Scope

1.1 This test method covers determination of the wavenumber of the plasma resonance minimum in the infrared reflectance of a doped semiconductor specimen, from which the majority carrier concentration can be obtained.

1.2 This test method of determination of the wavenumber minimum is nondestructive and contactless. It is applicable to n- and p-type silicon, n- and p-type gallium arsenide, and n-type germanium.

1.3 This test method gives a relative measurement in that the relation between the wavenumber of the plasma resonance minimum and the majority carrier concentration is empirical. Such relations have been established for the several cases summarized in Annex A1. These relations are based upon determinations of the plasma resonance minimum by the procedure of this method and determinations of the Hall coefficient according to Test Methods F 76 (Section 2) or resistivity according to Test Methods F 43 or Test Method F 84 (Section 2) as appropriate.

1.4 These relations have been established over a majority carrier concentration range from 1.5 × 1018 to 1.5 × 1021 cm −3 for n-type silicon, from 3 × 1018 to 5 × 1020 for p-type silicon, from 3 × 1018 to 7 × 1019 for n-type germanium, from 1.5 × 1017 to 1 × 1019 for n-type gallium arsenide, and from 2.6 × 1018 to 1.3 × 1020 cm −3 for p-type gallium arsenide.

1.5 These relations can be extended or developed for other materials by measuring the wavelength of the plasma resonance minimum according to this procedure on specimens whose majority carrier concentration has been determined by other means.

1.6 This test method is applicable to both bulk and diffused material. However, since there is some controversy over the effects of variations of junction depth on the measurement, it should be applied to surface concentration measurements on shallow (1 µm or less) diffusions only on a relative basis unless there is experimental corroboration of the results under the conditions of interest.

1.7 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Document History

May 15, 1992
Standard Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum
This test method covers determination of the wavenumber of the plasma resonance minimum in the infrared reflectance of a doped semiconductor specimen, from which the majority carrier concentration...
ASTM F398
May 15, 1992
Standard Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum
1. Scope 1.1 This test method covers determination of the wavenumber of the plasma resonance minimum in the infrared reflectance of a doped semiconductor specimen, from which the majority carrier...
January 1, 1987
STANDARD TEST METHOD FOR MAJORITY CARRIER CONCENTRATION IN SEMICONDUCTORS BY MEASUREMENT OF WAVENUMBER OR WAVELENGTH OF THE PLASMA RESONANCE MINIMUM
A description is not available for this item.
October 28, 1977
STANDARD TEST METHOD FOR MAJORITY CARRIER CONCENTRATION IN SEMICONDUCTORS BY MEASUREMENT OF WAVELENGTH OF THE PLASMA RESONANCE MINIMUM (R 1982) (E1-1985)
A description is not available for this item.
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