DOD - SMD 5962-86058
MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH CURRENT, DARLINGTON TRANSISTOR ARRAYS, MONOLITHIC SILICON
| Organization: | DOD |
| Publication Date: | 27 July 1989 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1. of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices".
The complete part number shall be as shown in the following example:
The device type shall identify the circuit function as follows:
Device type Generic number Circuit function 01 2803 Eight-gate Darlington transistor array
The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case outline V D-6 (18-lead, ,960" × .310" × .200"), dual-in-line package 2 C-2 (20-terminal, ,358" × .358" × .100"), square chip carrier package
Output voltage (VCE) - - - - - - - - - - - - - - 50 V dc Input voltage (VIN) - - - - - - - - - - - - - - - 30 V dc Continuous collector current (IC) - - - - - - - - 500 mA Continuous base current (IB)- - - - - - - - - - - 25 mA Power dissipation (PD): One darlington pair - - - - - - - - - - - - - - 1.0 W Total package - - - - - - - - - - - - - - - - - 2.25 W 1/ Storage temperature range - - - - - - - - - - - - −65°C to +150°C Junction temperature (TJ) - - - - - - - - - - - - +175°C Maximum package power dissipation, TA = +125°C - - 600 mW Thermal resistance, Junction-to-case (θJC)- - - - See MIL-M-38510, appendix C Thermal resistance, Junction-to-ambient (θJA): Case V - - - - - - - - - - - - - - - - - - - - 75°C/W Case 2 - - - - - - - - - - - - - - - - - - - - 130°C/W
Ambient operating temperature range (TA) - - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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