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DOD - SMD 5962-86058

MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH CURRENT, DARLINGTON TRANSISTOR ARRAYS, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 27 July 1989
Status: inactive
Page Count: 11
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1. of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 2803 Eight-gate Darlington transistor array

The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline V D-6 (18-lead, ,960" × .310" × .200"), dual-in-line package 2 C-2 (20-terminal, ,358" × .358" × .100"), square chip carrier package

Output voltage (VCE) - - - - - - - - - - - - - - 50 V dc Input voltage (VIN) - - - - - - - - - - - - - - - 30 V dc Continuous collector current (IC) - - - - - - - - 500 mA Continuous base current (IB)- - - - - - - - - - - 25 mA Power dissipation (PD): One darlington pair - - - - - - - - - - - - - - 1.0 W Total package - - - - - - - - - - - - - - - - - 2.25 W 1/ Storage temperature range - - - - - - - - - - - - −65°C to +150°C Junction temperature (TJ) - - - - - - - - - - - - +175°C Maximum package power dissipation, TA = +125°C - - 600 mW Thermal resistance, Junction-to-case (θJC)- - - - See MIL-M-38510, appendix C Thermal resistance, Junction-to-ambient (θJA): Case V - - - - - - - - - - - - - - - - - - - - 75°C/W Case 2 - - - - - - - - - - - - - - - - - - - - 130°C/W

Ambient operating temperature range (TA) - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 3, 2020
MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH CURRENT, DARLINGTON TRANSISTOR ARRAYS, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
June 6, 2014
MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH CURRENT, DARLINGTON TRANSISTOR ARRAYS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 22, 2002
MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH CURRENT, DARLINGTON TRANSISTOR ARRAYS, MONOLITHIC SILICON
A description is not available for this item.
SMD 5962-86058
July 27, 1989
MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH CURRENT, DARLINGTON TRANSISTOR ARRAYS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1. of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices"....
March 12, 1987
MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH CURRENT, DARLINGTON TRANSISTOR ARRAYS, MONOLITHIC SILICON
A description is not available for this item.
June 28, 1986
MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH CURRENT, DARLINGTON TRANSISTOR ARRAYS, MONOLITHIC SILICON
A description is not available for this item.
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