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DLA - SMD-5962-89776 REV A

MICROCIRCUIT, LINEAR, FAST QUAD NPN TRANSISTOR ARRAY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 15 July 1993
Status: inactive
Page Count: 11
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 EN2016 Fast quad NPN transistor array 02 EN2016A Fast quad NPN transistor array

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14 lead, .785" × .310" × .200"), dual-in-line package 2 C-2 (20 terminal, .358" ×.358" × .100"), square chip carrier package

Collector-base voltage (VCB) - - - - - - - - - - - - - - - 40 V Emitter-base voltage (VEB) - - - - - - - - - - - - - - - - 5 V Collector-emitter voltage (VCE) - - - - - - - - - - - - - 40 V Collector current (IC) - - - - - - - - - - - - - - - - - - 50 mA Base current (IB) - - - - - - - - - - - - - - - - - - - - 10 mA Power dissipation (PD) (TA = +25°C): Each transistor - - - - - - - - - - - - - - - - - - - - 500 mW Total package - - - - - - - - - - - - - - - - - - - - - 1.25 W Junction temperature (TJ) - - - - - - - - - - - - - - - - 175°C Storage temperature range - - - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - - - - +300°C Thermal resistance, junction-to-case (ΘJC) - - - - - - - - See MIL-M-38510, appendix C Thermal resistance, junction-to-ambient (ΘJA): Case C - - - - - - - - - - - - - - - - - - - - - - - - - 86°C/W Case 2 - - - - - - - - - - - - - - - - - - - - - - - - - 100°C/W

Ambient operating temperature range (TA) - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 14, 2007
MICROCIRCUIT, LINEAR, FAST QUAD NPN TRANSISTOR ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89776 REV A
July 15, 1993
MICROCIRCUIT, LINEAR, FAST QUAD NPN TRANSISTOR ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
February 11, 1991
MICROCIRCUIT, LINEAR, FAST QUAD NPN TRANSISTOR ARRAY, MONOLITHIC SILICON
A description is not available for this item.

References

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