DLA - DSCC-DWG-89007 REV B CANC
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
inactive, Most Current
| Organization: | DLA |
| Publication Date: | 22 September 2000 |
| Status: | inactive |
| Page Count: | 1 |
Document History
DSCC-DWG-89007 REV B CANC
September 22, 2000
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
A description is not available for this item.
December 19, 1989
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
This drawing describes the requirements for N-channel, enhancement mode MOSFET, power transistor specifically intended for use in high density power switching applications. Two levels of product...