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DOD - SMD 5962-87712

MICROCIRCUITS, MEMORY, DIGITAL, 512 X 8 BIT NONVOLATILE SRAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 13 December 1991
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 2004 512 × 8 bit, nonvolatile static RAM 250 ns 02 2004 512 × 8 bit, nonvolatile static RAM 300 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X D-10 (28-lead, .600" row spacing) dual-in-line package Y C-12 (32-terminal, .560" × .458" × ,120") rectangular chip carrier package

Temperature under bias - - - - - - - - - - - - - - - −65°C to +135°C Storage temperature- - - - - - - - - - - - - - - - - −65°C to +150°C Voltage on any pin with respect to ground - - - - - −1.0 V to +7.0 V dc DC output current- - - - - - - - - - - - - - - - - - 5.0 mA Lead temperature (soldering, 10 seconds) - - - - - - 300°C Power dissipation (PD) - - - - - - - - - - - - - - - 0.75 W Thermal resistance, junction-to-case (θJC) - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - 200°C

Supply voltage (VCC) - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Minimum high level input voltage (VIH) - - - - - - +2.3 V dc Maximum high level input voltage (VIH) - - - - - - +VCC + 0.5 V dc Minimum low level input voltage (VIL) - - - - - - - −0.5 V dc Maximum low level input voltage (VIL) - - - - - - - +0.8 V dc Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

July 21, 2017
MICROCIRCUITS, MEMORY, DIGITAL, 512 X 8 BIT NONVOLATILE STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 23, 2010
MICROCIRCUITS, MEMORY, DIGITAL, 512 X 8 BIT NONVOLATILE STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-87712
December 13, 1991
MICROCIRCUITS, MEMORY, DIGITAL, 512 X 8 BIT NONVOLATILE SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
January 8, 1990
MICROCIRCUITS, MEMORY, DIGITAL, 512 X 8 BIT NONVOLATILE SRAM, MONOLITHIC SILICON
A description is not available for this item.
January 12, 1988
MICROCIRCUITS, MEMORY, DIGITAL, 512 X 8 BIT NONVOLATILE SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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