NPFC - MIL-S-19500/547
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 29 January 1988 |
| Status: | inactive |
| Page Count: | 21 |
scope:
This specification covers the detail requirements for a N-channel, enhancement mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1, TO-205AD.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, RBE-2, Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
November 9, 2022
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, POWER, LOW-THRESHOLD LOGIC LEVEL, HIGH FREQUENCY, HIGH SWITCHING SPEED, DEVICE TYPES 2N6660 AND 2N6661, THROUGH HOLE AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels...
September 4, 2020
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, POWER, LOW-THRESHOLD LOGIC LEVEL, HIGH FREQUENCY, HIGH SWITCHING SPEED, DEVICE TYPES 2N6660 AND 2N6661, THROUGH HOLE AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, lowthreshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels...
June 30, 2020
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, POWER, LOW-THRESHOLD LOGIC LEVEL, HIGH FREQUENCY, HIGH SWITCHING SPEED, DEVICE TYPES 2N6660 AND 2N6661, THROUGH HOLE AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, lowthreshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels...
September 23, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6660 AND 2N6661, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels...
July 5, 2016
Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
August 29, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6660 AND 2N6661, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, lowthreshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of...
June 24, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6660 AND 2N6661, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, lowthreshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of...
December 19, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
July 30, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of...
September 3, 1991
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-S-19500/547
January 29, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for a N-channel, enhancement mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor intended for use in high...
November 18, 1985
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPE 2N6661 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
May 3, 1982
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPE 2N6661 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.