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DLA - SMD-5962-86872 REV A

MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, NAND BUFFER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 3 March 1988
Status: inactive
Page Count: 10
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54F38 Quad two-input NAND buffer with open collector outputs

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - - −0.5 V dc minimum to +7.0 V dc maximum Input voltage range- - - - - - - - - - - - - - - - - - −1.2 V dc minimum at −18 mA to +7.0 V dc maximum Output sink current- - - - - - - - - - - - - - - - - - 128 mA Maximum power dissipation (PD) - - - - - - - - - - - - 165 mW Thermal resistance, junction-to-case (θJC):- - - - - - See MIL-M-38510, appendix C Lead temperature (soldering, 10 seconds) - - - - - - - +300°C Junction temperature (TJ)- - - - - - - - - - - - - - - +175°C Storage temperature range- - - - - - - - - - - - - - - −65°C to +150°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - - - 2.0 V dc Maximum low level input voltage (VIL)- - - - - - - - - 0.8 V dc Case operating temperature range (TC)- - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

June 5, 2023
MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, NAND BUFFER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 12, 2018
MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, NAND BUFFER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 10, 2013
MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, NAND BUFFER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 6, 2006
MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, NAND BUFFER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-86872 REV A
March 3, 1988
MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, NAND BUFFER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 20, 1987
MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, NAND BUFFER, MONOLITHIC SILICON
A description is not available for this item.

References

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