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DLA - SMD-5962-83021 REV E

MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 6 July 1992
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit 01 54ALS299 8-bit bidirectional universal shift/storage register with 3-state outputs 02 54ALS323 8-bit bidirectional universal shift/storage register with 3-state outputs

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline R D-8 (20-lead, ¼" × 1 1/16"), dual-in-line package S F-9 (20-lead, ¼" × ½"), flat package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - - - −1.5 V dc at −18 mA to +7.0 V dc I/O Ports - - - - - - - - - - - - - - - - - 5.5 V dc maximum Storage temperature - - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) per device 1/ - - - - 220 mW Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC): Cases R and S - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case 2 - - - - - - - - - - - - - - - - - - - - - - 80°C/W 2/ Junction temperature (TJ) - - - - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - - 2.0 V dc Maximum low level input voltage (VIL)- - - - - - - - 0.7 V dc Case operating temperature range (TC)- - - - - - - - −55°C to +125°C Minimum clock pulse width: Device type 01: Case R - - - - - - - - - - - - - - - - - - - - - 22 ns Cases S and 2- - - - - - - - - - - - - - - - - - 22 ns Device type 02: Cases R, S, and 2- - - - - - - - - - - - - - - - 20 ns Minimum clear pulse width: Device type 01 - - - - - - - - - - - - - - - - - - 12 ns Minimum clear inactive state pulse width: Device type 01 - - - - - - - - - - - - - - - - - - 15 ns Minimum clear pulse data setup time: Device type 02: Low (active) - - - - - - - - - - - - - - - - - - 25 ns High (inactive)- - - - - - - - - - - - - - - - - 18 ns Minimum setup time at select (S0 S1) - - - - - - - - 25 ns Minimum setup time: High level data (SL, SR, A - H) - - - - - - - - - 18 ns Low level data (SL, SR, A - H) - - - - - - - - - 15 ns Minimum hold time (S0, S1, SL, SR, A - H)- - - - - - 0 ns

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 1, 2020
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
January 11, 2016
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 21, 2005
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 9, 2002
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
A description is not available for this item.
February 2, 1996
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-83021 REV E
July 6, 1992
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". The...
May 4, 1987
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
A description is not available for this item.
December 10, 1986
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
A description is not available for this item.
September 13, 1985
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
A description is not available for this item.
June 11, 1984
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
A description is not available for this item.
February 17, 1984
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, SHIFT REGISTER, MONOLITHIC SILICON
A description is not available for this item.
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