ASTM F1392
STANDARD TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE
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| Organization: | ASTM |
| Publication Date: | 15 May 1992 |
| Status: | inactive |
| Page Count: | 10 |
| ICS Code (Semiconducting materials): | 29.045 |
Document History
December 10, 2002
Standard Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements With a Mercury Probe
This test method covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4× 10(13) to about 8 × 10(16)...
June 10, 2000
Standard Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
1. Scope 1.1 This test method covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 × 10 13 to about 8...
January 1, 1993
Standard Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
1. Scope 1.1 This test method covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 × 1013 to about 8...
ASTM F1392
May 15, 1992
STANDARD TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE
A description is not available for this item.